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  inchange semiconductor isc product specification isc silicon npn power transistor 2sc2139 description high collector-emitter breakdown voltage- : v (br)ceo = 400v (min) high switching speed applications switching regulator and high vo ltage switching applications. high speed dc-dc converter applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 6 v i c collector current-continuous 10 a i b b base current-continuous 2 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2sc2139 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 400 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 500 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 1.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.5a b 2.0 v h fe dc current gain i c = 5a; v ce = 5v 10 i cbo collector cutoff current v cb = 400v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 6v; i c = 0 1.0 ma switching times t r rise time 1.0 s t stg storage time 2.0 s t f fall time v cc = 200v; i b1 = -i b2 = 0.5a; r l = 40 1.0 s isc website www.iscsemi.cn


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